moc8050 document number 83659 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179013 nc c e a c nc 1 2 3 6 5 4 pb p b -free e3 optocoupler, photodarlington output, high gain features ? high collector to emitter breakdown voltage: 80 v min high isolation voltage v iso = 5300 v rms base lead not connected solid state reliability standard dip package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul - file no. e52744 system code h or j din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 bsi iec60950 iec60065 applications description the moc8050 is an optically coupled isolator with a gallium arsenide infrared em itter and a s ilicon photo- darlington sensor. switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no cross talk between chan- nels. these optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks moc8050 ctr > 500 %, dip-6 moc8050-x006 ctr > 500 %, dip-6 400 mil (option 6) moc8050-x007 ctr > 500 %, smd-6 (option 7) moc8050-x009 ctr > 500 %, smd-6 (option 9) parameter test condition symbol value unit peak reverse voltage v r 3.0 v continuous forward current i r 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c
www.vishay.com 2 document number 83659 rev. 1.5, 26-oct-04 moc8050 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 80 v collector load current 125 ma power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition symbol value unit total package dissipation p tot 250 mw derate linearly from 25 c 3.3 mw/c isolation test voltage v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? creepage path 7mm clearance path 7mm comparative tracking index 175 storage temperature range t stg - 55 to +125 c operating temperature range t amb - 55 to +100 c lead soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma v f 1.25 1.5 v reverse current v r = 3.0 v i r 0.1 10 a capacitance v r = 0 c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 10 abv ceo 80 v collector-emitter leakage current v ce = 60 v, i f = 0 i ceo 25 1000 na emitter-collector breakdown voltage i c = 10 av eco 5.0 8.0 v parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i c = 50 ma, i f = 50 ma v cesat 0.9 1.0 v isolation test voltage 1.0 s, 60 hz v iso 5300 v rms capacitance (input-output) c io 0.5 pf
moc8050 document number 83659 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 1.5 v ctr 500 % parameter test condition symbol min ty p. max unit rise time v cc = 13.5 v, i f = 50 ma, r l = 100 ? t r 10 s fall time v cc = 13.5 v, i f = 50 ma, r l = 100 ? t f 35 s figure 1. forward voltage vs. forward current figure 2. typical i c vs. v ce imo c8050_01 if - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 vf - forward voltage - v ta = C55 c ta=25c ta=85c imoc8050_02 5 4 3 2 1 0 0 20 40 60 80 100 v ce - collector to emitter voltage i c - collector current if=5 ma if=1 ma if=10 ma figure 3.typicali c s.v ce s.temperature figure 4.typicalnctrs.ledcurrent imoc8050_03 5 4 3 2 1 0 0 2 4 6 8 v ce collector-emitter voltage i c - collector current 25 c 50 c 75 c imoc8050_04 .1 1 10 100 10 1 .1 .01 i f in ma nctr 75 c 25 c 50 c normalized @ 25 c v ce =5v,i f =10ma
www.vishay.com 4 document number 83659 rev. 1.5, 26-oct-04 moc8050 vishay semiconductors figure 5. typical i c vs. v ce (sat region) figure 6. typical i ceo vs. temperature figure 7. low to high propagation delay vs. collector load resistance and led current imoc8050_05 1. 2 1.0 0. 8 0. 6 0. 4 0. 2 0. 0 .0 1 .1 1 10 100 v ce - collector to emitter voltage i c - collector current i f =10 ma i f =5 ma i f =1 ma imoc8050_06 80 70 60 50 40 30 20 .1 1 10 100 1000 10000 temperature in c iceo in na imoc8050_07 0 5 10 15 20 0 20 40 60 80 v cc =5v vth = 1,5 v 220 ? 470 ? 1k ? i f - led current - ma t plh - low/high propagation delay - s 100 ? imoc8050_08 0 5 10 15 20 0 5 10 15 20 100 ? 1k ? if - led current - ma v cc =5v vth = 1.5 v tphl -low/high propagation delay - s imoc8050_09 i f t r =1.5 v v o t d t s t f t phl t plh v th imoc8050_10 input v out v cc =5v r l
moc8050 document number 83659 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
www.vishay.com 6 document number 83659 rev. 1.5, 26-oct-04 moc8050 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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